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| QSL9 Transistors General purpose transistor (isolated transistor and diode) QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver External dimensions (Unit : mm) QSL9 2.8 1.6 0.3 to 0.6 Structure Silicon epitaxial planar transistor Schottky barrier diode ROHM : TSMT5 Each lead has same dimensions Abbreviated symbol : L09 Equivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) Packaging specifications Type Package Marking Code Basic ordering unit(pieces) QSL9 TSMT5 L09 TR 3000 0 to 0.1 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (3) (4) 0.95 0.95 1.9 2.9 1.0MAX 0.85 0.7 0.4 0.16 (2) (1) (5) Rev.A 1/4 QSL9 Transistors Absolute maximum ratings (Ta=25C) Tr1 Limits Symbol -15 VCBO VCEO -12 -6 VEBO -1.5 IC Collector current ICP -3 Power dissipation Pc 0.9 Junction temperature Tj 150 Range of storage temperature Tstg -40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 1 Single pulse, Pw=1ms. 2 Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate. 3 Each terminal mounted on a recommended. Unit V V V A 1 A W/ELEMENT 2 C C Di2 Parameter Peak reverse voltage Reverse voltage (DC) Average rectified forward current Forward current surge peak (60HZ, 1) Power dissipation Junction temperature Range of storage temperature Limits Symbol 25 VRM 20 VR 700 IF 3 IFSM 0.7 PD 125 To Tstg -40 to +125 Unit V V ma A W/ELEMENT C C Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate. Tr1 & Di2 Parameter Total power dissipation Symbol PD Limits 0.5 1.25 Unit W/ TOTAL W/ TOTAL 1 2 1 Each terminal mounted on a recommended. 2 Mounted on a 25mm+ 25mm+ t0.8mm seramic substrate. Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -110 - 400 12 Max. - - - -100 -100 -200 680 - - Unit V V V nA nA mV - MHz pF Conditions IC= -1mA IC= -10A IE= -10A VCB= -15V VEB= -6V IC= -500mA, IB= -25mA VCE= -2V, IC= -200mA VCE= -2V, IE=200mA, f=100MHz VCB= -10V, IE=0mA, f=1MHz Di2 Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - - - Typ. - - Max. 490 200 - Unit mV A IF=700mA VR=20V IF=IR=100mA,Irr=0.1IR Conditions trr 9 ns Rev.A 2/4 QSL9 Transistors Electrical characteristic curves Tr1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=100C VCE= -2V Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) 1000 10 1 Ta=25C DC CURRENT GAIN : hFE Ta=25C Ta= -40C IC/IB=20/1 VCE= -2V Pulsed 1 Ta=25C Pulsed Ta= -40C VBE(sat) Ta=100C 0.1 100 0.1 Ta=100C VCE(sat) IC/IB=50/1 0.01 IC/IB=20/1 IC/IB=10/1 0.01 Ta=25C Ta= -40C 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Fig.2 Base-emitter saturation voltage Fig.3 Collector-emitter saturation voltage collector current vs. collector current vs. collector current 10 TRANSITION FREQUENCY : fT (MHz) 1000 VCE= -2V Pulsed 10000 Ta=25C VCE= -2V f=100MHz SWITCHING TIME : (ns) Ta=25C COLLECTOR CURRENT : IC (A) VCE= -5V f=100MHz 1 1000 0.1 Ta=100C Ta=25C 100 100 tstg tf Ta= -40C 0.01 10 tdon tr 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE(on) (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C IE=0mA f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 QSL9 Transistors Di2 10 1000m 100m FORWARD CURRENT : IF (A) 1 C 5 REVERSE CURRENT : IR (A) Ta=125C 10m 1m 100 Ta=25C 100m Ta =2 5 Ta 10m C =- 25 C Ta 2 =1 10 1 0.1 Ta= -25C 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V) 0 10 20 30 40 50 60 70 REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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